Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications-Reference-Cited by-同舟云学术

Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications

Published:2020 Issue:32 Volume:12 Page:16755-16761
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lee Ho-In¹²³⁴⁵,Park Jinseon⁶⁷⁸⁵,Kim Yun Ji¹²³⁴⁵,Heo Sunwoo¹²³⁴⁵,Hwang Jeongwoon⁹¹⁰¹¹⁵^ORCID,Kim Seung-Mo¹²³⁴⁵,Lee Yongsu¹²³⁴⁵,Cho Kyeongjae¹²¹³¹⁴¹⁵^ORCID,Sung Myung Mo⁶⁷⁸⁵^ORCID,Lee Byoung Hun¹²³⁴⁵^ORCID

Affiliation:

1. Center for Emerging Electronic Devices and Systems

2. School of Materials Science and Engineering

3. Gwangju Institute of Science and Technology

4. Gwangju 61005

5. South Korea

6. Department of Chemistry

7. Hanyang University

8. Seongdong-gu

9. Department of Physics Education

10. Chonnam National University

11. Gwangju

12. Department of Materials Science and Engineering

13. University of Texas at Dallas

14. Richardson

15. USA

Abstract

A two-dimensional WO_x/ZnO stack reveals a unique carrier transport mechanism, which is explained by a dynamic band alignment between WO_x and ZnO modulated by an external gate bias.

Funder

Global Frontier Hybrid Interface Materials

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR10988A

Reference44 articles.

1. 2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

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3. Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure

4. Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

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