Gate-Controlled Graphene-Silicon Schottky Junction Photodetector-Reference-Cited by-同舟云学术

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

Published:2018-06-07 Issue:28 Volume:14 Page:1801182
ISSN:1613-6810
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language:en
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Author:

Chang Kyoung Eun¹,Yoo Tae Jin¹,Kim Cihyun¹,Kim Yun Ji¹,Lee Sang Kyung¹,Kim So-Young¹,Heo Sunwoo¹,Kwon Min Gyu¹,Lee Byoung Hun¹¹

Affiliation:

1. School of Materials Science and Engineering; Center for Emerging Electronic Devices and Systems; Gwangju Institute of Science and Technology; Gwangju 500-712 Republic of Korea

Funder

Global Frontier Program

Creative Materials Discovery Program

Nano Materials Technology Development Program

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference51 articles.

1. Graphene field-effect transistors as room-temperature terahertz detectors

2. Ultrafast graphene-based broadband THz detector

3. Broadband high photoresponse from pure monolayer graphene photodetector

4. Plasmon Resonance in Individual Nanogap Electrodes Studied Using Graphene Nanoconstrictions as Photodetectors

5. Photocurrent in graphene harnessed by tunable intrinsic plasmons

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