Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories-Reference-Cited by-同舟云学术

Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories

Published:2020 Issue:59 Volume:10 Page:36141-36146
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kim Doo San¹²³⁴^ORCID,Kim Ju Eun¹²³⁴,Gill You Jung¹²³⁴,Park Jin Woo¹²³⁴,Jang Yun Jong¹²³⁴,Kim Ye Eun¹²³⁴,Choi Hyejin⁵⁶⁴,Kwon Oik⁵⁶⁴,Yeom Geun Young¹²³⁴⁷^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering

2. Sungkyunkwan University

3. Suwon 16419

4. Republic of Korea

5. Process Development Team

6. Semiconductor R&D Center Samsung Electrics Co. Ltd

7. SKKU Advanced Institute of Nano Technology (SAINT)

Abstract

Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching by hydrogen-based gases such as H₂, CH₄, NH₃, CH₄ + H₂, and CH₄ + NH₃.

Funder

Ministry of Trade, Industry and Energy

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA05321J

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