Understanding the mechanism of plasma etching of carbon-doped GeSbTe phase change material

Author:

Liu Jin,Zhang Jiarui,Wan Ziqi,Chen Yuqing,Zheng Jia,Zou Xixi,Song Sannian,Qiao Shan,Wang Ruobing,Song Zhitang,Zhou XilinORCID

Publisher

Elsevier BV

Reference35 articles.

1. Nanoscale phase change material array by sub-resolution assist feature for storage class memory application;Zhang;Nanomaterials,2023

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3. Ultra-High Endurance and Low IOFF Selector Based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory;Cheng,2018

4. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage;Liu;Chin Phys B,2021

5. Review on recent progress in patterning phase change materials;Shen;J Vacuum Sci Technol A,2020

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