In operando charge transport imaging of atomically thin dopant nanostructures in silicon

Author:

Kölker Alexander1ORCID,Gramse Georg23ORCID,Stock Taylor J. Z.1ORCID,Aeppli Gabriel456,Curson Neil J.17

Affiliation:

1. London Centre of Nanotechnology, UCL, 17-19 Gordon Street, London WC1H 0AH, UK

2. Johannes Kepler University, Biophysics Institute, Gruberstrasse 40, 4020 Linz, Austria

3. Keysight Laboratories, Keysight Technologies, Inc., Gruberstrasse 40, 4020 Linz, Austria

4. Department of Physics and Quantum Center, ETH, Zurich CH-8093, Switzerland

5. Institut de Physique, EPFL, Lausanne CH-1015, Switzerland

6. Paul Scherrer Institut, Villigen CH-5232, Switzerland

7. Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK

Abstract

We exploit the full capabilities of electrical scanning probe microscopy (e-SPM) to inspect the charge carrier transport of an electrically contacted, buried phosphorus, 2D nanowire (P-wire) in operando.

Funder

Seventh Framework Programme

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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