<i>In operando</i> charge transport imaging of atomically thin dopant nanostructures in silicon-Reference-Cited by-同舟云学术

In operando charge transport imaging of atomically thin dopant nanostructures in silicon

Published:2022 Issue:17 Volume:14 Page:6437-6448
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kölker Alexander¹^ORCID,Gramse Georg²³^ORCID,Stock Taylor J. Z.¹^ORCID,Aeppli Gabriel⁴⁵⁶,Curson Neil J.¹⁷

Affiliation:

1. London Centre of Nanotechnology, UCL, 17-19 Gordon Street, London WC1H 0AH, UK

2. Johannes Kepler University, Biophysics Institute, Gruberstrasse 40, 4020 Linz, Austria

3. Keysight Laboratories, Keysight Technologies, Inc., Gruberstrasse 40, 4020 Linz, Austria

4. Department of Physics and Quantum Center, ETH, Zurich CH-8093, Switzerland

5. Institut de Physique, EPFL, Lausanne CH-1015, Switzerland

6. Paul Scherrer Institut, Villigen CH-5232, Switzerland

7. Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK

Abstract

We exploit the full capabilities of electrical scanning probe microscopy (e-SPM) to inspect the charge carrier transport of an electrically contacted, buried phosphorus, 2D nanowire (P-wire) in operando.

Funder

Seventh Framework Programme

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR08381C

Reference30 articles.

1. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

2. Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

3. A single-atom transistor

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5. A surface code quantum computer in silicon

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