Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films-Reference-Cited by-同舟云学术

Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films

Published:2017 Issue:37 Volume:5 Page:9744-9752
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Minhyeong¹²³⁴^ORCID,Ko Eunjung¹²³⁴,Ko Dae-Hong¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Yonsei University

3. 03722 Seoul

4. Korea

Abstract

We investigated the lattice vibration and strain states in highly P-doped epitaxial Si films using Raman scattering and X-ray diffraction (XRD) measurements.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02715J

Reference56 articles.

1. A 90-nm Logic Technology Featuring Strained-Silicon

2. Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

3. In Situ Phosphorus Doping during Silicon Epitaxy in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

4. Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure

5. Heavily Phosphorus Doped Silicon Junctions for nMOS Applications

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