Tuning graphene transistors through ad hoc electrostatics induced by a nanometer-thick molecular underlayer-Reference-Cited by-同舟云学术

Tuning graphene transistors through ad hoc electrostatics induced by a nanometer-thick molecular underlayer

Published:2019 Issue:42 Volume:11 Page:19705-19712
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Mahmood Ather¹²³⁴⁵,Yang Cheol-Soo⁶⁷⁸,Jang Seunghun⁶⁷⁸,Routaboul Lucie⁹¹⁰²¹¹¹²,Chang Hyunju⁶⁷⁸,Ghisolfi Alessio¹²¹³¹⁴⁵,Braunstein Pierre¹²¹³¹⁴⁵^ORCID,Bernard Laetitia¹⁵¹⁶¹⁷¹⁸,Verduci Tindara¹²³⁴⁵,Dayen Jean-François¹²³⁴⁵,Samorì Paolo¹²¹⁹⁴⁵^ORCID,Lee Jeong-O.⁶⁷⁸,Doudin Bernard¹²³⁴⁵^ORCID

Affiliation:

1. University of Strasbourg

2. CNRS

3. IPCMS UMR 7504

4. Strasbourg

5. France

6. Korea Research Institute of Chemical Technology (KRICT)

7. Daejeon 305-600

8. Korea

9. LCC-CNRS

10. Université de Toulouse

11. UPR 8241

12. 31077 Toulouse Cedex 4

13. CHIMIE UMR 7177

14. 67081 Strasbourg

15. Swiss Federal Laboratories for Materials Science and Technology (EMPA)

16. Überlandstrasse 129

17. 8600 Dübendorf

18. Switzerland

19. ISIS UMR 7006

Abstract

A graphene transistor can reveal the ordering of dipolar molecules forming a nm-thick underlayer, stabilized under an electric field at low temperatures.

Funder

Agence Nationale de la Recherche

Centre International de Recherche aux Frontières de la Chimie

National Research Foundation of Korea

European Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR06407A

Reference41 articles.