Structures, mobility and electronic properties of point defects in arsenene, antimonene and an antimony arsenide alloy-Reference-Cited by-同舟云学术

Structures, mobility and electronic properties of point defects in arsenene, antimonene and an antimony arsenide alloy

Published:2017 Issue:17 Volume:5 Page:4159-4166
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Xiaotian¹²³⁴⁵,Liu Yunxia¹²³⁴,Song Zhigang⁶⁷⁸⁹,Li Yongdan⁵¹⁰¹¹⁹,Wang Weizhou⁵¹⁰¹¹⁹,Lin Haiping¹²³⁴,Wang Lu¹²³⁴^ORCID,Li Youyong¹²³⁴^ORCID

Affiliation:

1. Functional Nano & Soft Materials Laboratory (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices

2. Soochow University

3. Suzhou

4. China

5. College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials

6. State Key Laboratory of Mesoscopic Physics and Department of Physics

7. Peking University

8. Beijing 100871

9. P. R. China

10. Luoyang Normal University

11. Luoyang 471934

Abstract

We investigate the structural stability, mobility and electronic properties of typical point defects in 2D arsenene, antimonene and antimony arsenide.

Funder

National Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00306D

Reference48 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium