Highly robust SiCOH/mesoporous SiO2 ultralow dielectric films with heterostructures-Reference-Cited by-同舟云学术

Highly robust SiCOH/mesoporous SiO2 ultralow dielectric films with heterostructures

Published:2014 Issue:54 Volume:4 Page:28409-28416
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Park Jong-Min¹²³⁴⁵,Kim Kyoung Hwan¹²³⁴,An Cheng Jin¹²³⁴,Jin Ming Liang¹²³⁴,Hahn Jun-Hee⁶⁷⁸,Kong Byung-Seon⁹¹⁰,Jung Hee-Tae¹²³⁴

Affiliation:

1. National Research Lab. For Organic Opto-Electronic Materials

2. Department of Chemical and Biomolecular Eng. (BK-21)

3. Korea Advanced Institute of Science and Technology

4. Daejeon 305-701, Korea

5. Performance Materials R&D Center

6. Division of Advanced Technology

7. Korea Research Institute of Standards and Science

8. Daejeon 305-340, Korea

9. KCC Central Research Institute

10. Yonginsi, Korea

Abstract

We report here a new dual-coating method for the deposition of SiCOH (elementally descriptive but not representing the stoichiometry) ATMS (allyltrimethylsilane) low-k films on mesoporous SiO₂ (SBA-15)/PEG (polyethylene glycol) composite films to improve the dielectric constant and mechanical properties of SiCOH/SBA-15 dual forms.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA03604B

Reference54 articles.

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