A graphene P–N junction induced by single-gate control of dielectric structures-Reference-Cited by-同舟云学术

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A graphene P–N junction induced by single-gate control of dielectric structures

Published:2019 Issue:29 Volume:7 Page:8796-8802
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xu Xiaodan¹²³⁴⁵,Wang Cong¹²³⁴⁵^ORCID,Liu Yang¹²³⁴⁵,Wang Xiaofeng⁶⁷⁸⁹⁵,Gong Nan¹²³⁴⁵,Zhu Zhimao¹²³⁴⁵,Shi Bin¹²³⁴⁵,Ren Mengxin¹²³⁴⁵,Cai Wei¹²³⁴⁵^ORCID,Rupp Romano A.¹⁰¹¹¹²¹³¹⁴,Zhang Xinzheng¹²³⁴⁵^ORCID,Xu Jingjun¹²³⁴⁵

Affiliation:

1. The MOE Key Laboratory of Weak-Light Nonlinear Photonics

2. TEDA Institute of Applied Physics and School of Physics

3. Nankai University

4. Tianjin 300457

5. China

6. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication

7. CAS Center for Excellence in Nanoscience

8. National Center for Nanoscience and Technology

9. Beijing 100190

10. Faculty of Physics

11. University of Vienna

12. A-1090 Vienna

13. Austria

14. Jožef Stefan Institute

Abstract

A graphene P–N-junction was realized using pure SU-8 (L0-type) and lithium enriched SU-8 (L8-type) as top gate dielectrics.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Nankai University

National Basic Research Program of China

Ministry of Education of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02474C

Reference45 articles.

1. Graphene transistors

2. Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene

3. Ultrafast graphene photodetector

4. Graphene photodetectors for high-speed optical communications

5. Broadband high photoresponse from pure monolayer graphene photodetector

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