Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires
Author:
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR00032D
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1. Semiconductor Nanowires for Energy Conversion
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