Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates-Reference-Cited by-同舟云学术

Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates

Published:2018 Issue:23 Volume:6 Page:6297-6304
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Siol Sebastian¹²³⁴⁵^ORCID,Han Yanbing¹²³⁶⁷^ORCID,Mangum John⁸²³,Schulz Philip¹²³,Holder Aaron M.¹²³,Klein Talysa R.¹²³,van Hest Maikel F. A. M.¹²³,Gorman Brian⁸²³,Zakutayev Andriy¹²³^ORCID

Affiliation:

1. National Renewable Energy Laboratory

2. Golden

3. USA

4. EMPA – Swiss Federal Laboratories for Materials Science and Technology

5. 8600 Dübendorf

6. Fudan University

7. Shanghai 200433

8. Colorado School of Mines

Abstract

The wurtzite polymorph of MnTe with a wider band gap and moderate p-type doping is stabilized on an amorphous indium zinc oxide substrate.

Funder

Office of Science

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01828F

Reference32 articles.

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2. J. Wang and M.Isshiki , Wide-Bandgap II–VI Semiconductors: Growth and Properties , in Springer Handbook of Electronic and Photonic Materials , ed. S. Kasap and P. Capper , Springer US , Boston, MA , 2007 , pp. 325–342

3. High Pressure - High Temperature Diffraction Study of MnTe Using Synchrotron Radiation

4. Pressure-induced phase transitions of MnTe

5. X-ray photoelectron spectra of zinc-blende MnTe

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