Broadband Polarization‐Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons

Abstract

Abstract2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization‐sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting α‐MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of α‐MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the α‐MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV‐to‐NIR wavelengths. These results demonstrate that 2D magnetic semiconducting α‐MnTe nanoribbons provide a promising platform to design the next‐generation polarization‐sensitive photodetectors in a broadband range.