Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films-Reference-Cited by-同舟云学术

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Published:2016 Issue:12 Volume:6 Page:9779-9788
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Srinatha N.¹²³⁴,No Y. S.⁵⁶⁷⁸⁹,Kamble Vinayak B.¹⁰¹¹¹²⁴,Chakravarty Sujoy¹³¹⁴⁴,Suriyamurthy N.¹⁵¹⁶¹⁷⁴,Angadi Basavaraj¹²³⁴,Umarji A. M.¹⁸¹⁹²⁰⁴,Choi W. K.⁵⁶⁷⁸⁹

Affiliation:

1. Department of Physics

2. Bangalore University

3. Bangalore 560 056

4. India

5. Interface Control Research Center

6. Future Convergence Research Division

7. Korea Institute of Science and Technology

8. Seoul 136-701

9. Republic of Korea

10. School of Physics

11. Indian Institute of Science Education and Research

12. Thiruvananthapuram 695016

13. UGC-DAE Consortium for Scientific Research

14. Kokilamedu-603104

15. Radiological Safety Division

16. Indira Gandhi Centre for Atomic Research

17. Kalpakkam 603102

18. Materials Research Centre

19. Indian Institute of Science

20. Bangalore-560 067

Abstract

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA22795J

Reference39 articles.

1. Acceptor doping in ZnSe versus ZnTe

2. Recent progress in processing and properties of ZnO

3. Making Nonmagnetic Semiconductors Ferromagnetic

4. A New Detector for Gaseous Components Using Semiconductive Thin Films.

5. Study on a Detector for Gaseous Components Using Semiconductive Thin Films.

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