Achieving single domain relaxor-PT crystals by high temperature poling-Reference-Cited by-同舟云学术

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Achieving single domain relaxor-PT crystals by high temperature poling

Published:2014 Issue:14 Volume:16 Page:2892-2897
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Fei¹²³⁴,Wang Linghang¹²³⁴,Jin Li¹²³⁴,Xu Zhuo¹²³⁴,Zhang Shujun⁵⁶⁷

Affiliation:

1. Electronic Materials Research Laboratory

2. Key Laboratory of the Ministry of Education and International Center for Dielectric Research

3. Xi'an Jiaotong University

4. Xi'an 710049, China

5. Materials Research Institute

6. Pennsylvania State University

7. , USA

Abstract

Single domain relaxor-PT crystals are important from both fundamental and application viewpoints.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C3CE42330A

Reference40 articles.

1. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals

2. High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective

3. The Growth and Properties of Relaxor-Based Ferroelectric Single Crystals

4. Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties

5. Electromechanical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals

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1. Large Electro‐Optic Coefficient in Single‐Domain PIN‐PMN‐PT Single Crystal;Advanced Optical Materials;2024-07-12

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4. Poling above the Curie temperature driven large enhancement in piezoelectric performance of Mn doped PZT-based piezoceramics;Nano Energy;2023-08

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