Grain boundary scattering effects on mobilities in p-type polycrystalline SnSe-Reference-Cited by-同舟云学术

Grain boundary scattering effects on mobilities in p-type polycrystalline SnSe

Published:2017 Issue:39 Volume:5 Page:10191-10200
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Si¹²³⁴⁵^ORCID,Hui Si⁵⁶⁷⁸,Peng Kunling⁹¹⁰¹¹⁴^ORCID,Bailey Trevor P.⁵⁶⁷⁸^ORCID,Zhou Xiaoyuan⁹¹⁰¹¹⁴^ORCID,Tang Xinfeng¹²³⁴^ORCID,Uher Ctirad⁵⁶⁷⁸^ORCID

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing

2. Wuhan University of Technology

3. Wuhan

4. China

5. Department of Physics

6. University of Michigan

7. Ann Arbor

8. USA

9. College of Physics

10. Chongqing University

11. Chongqing

Abstract

Grain boundary scattering is the dominant reason for the deteriorated performance of polycrystalline SnSe compared to single crystals.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03022C

Reference61 articles.

1. Rationally Designing High-Performance Bulk Thermoelectric Materials

2. Concerted Rattling in CsAg 5 Te 3 Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance

3. Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1

4. A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

5. A new class of doped nanobulk high-figure-of-merit thermoelectrics by scalable bottom-up assembly

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