Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN-Reference-Cited by-同舟云学术

Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN

Published:2019 Issue:8 Volume:21 Page:1224-1230
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Yuewen¹²³⁴⁵,Xiu Xiangqian¹²³⁴⁵^ORCID,Xiong Zening¹²³⁴⁵,Hua Xuemei¹²³⁴⁵,Xie Zili¹²³⁴⁵,Chen Peng¹²³⁴⁵,Liu Bin¹²³⁴⁵,Tao Tao¹²³⁴⁵,Zhang Rong¹²³⁴⁵,Zheng Youdou¹²³⁴⁵

Affiliation:

1. Key Laboratory of Advanced Photonic and Electronic Materials

2. School of Electronic Science and Engineering

3. Nanjing University

4. Nanjing

5. P. R. China

Abstract

Hexagonal GaN has been obtained by nitridating β-Ga₂O₃ film despite structural mismatch between β-Ga₂O₃ and GaN, and the conversion process has been investigated systematically.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01336E

Reference41 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

3. Leakage mechanism in GaN and AlGaN Schottky interfaces

4. Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

5. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24

2. Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes;Journal of Materials Chemistry C;2023

3. Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review;Reviews on Advanced Materials and Technologies;2023

4. Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process;Journal of Sol-Gel Science and Technology;2021-09-08

5. An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure;Journal of Applied Physics;2021-07-21