n-Doping-induced efficient electron-injection for high efficiency inverted organic light-emitting diodes based on thermally activated delayed fluorescence emitter-Reference-Cited by-同舟云学术

n-Doping-induced efficient electron-injection for high efficiency inverted organic light-emitting diodes based on thermally activated delayed fluorescence emitter

Published:2017 Issue:33 Volume:5 Page:8400-8407
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Yongzhen¹²³⁴⁵,Wei Xiaofang¹²³⁴⁵,Li Zhiyi¹²³⁴⁵,Liu Yanwei⁶⁷⁴⁵,Liu Jianjun¹²³⁴⁵,Wang Ruifang¹²³⁴⁵,Wang Pengfei¹²³⁴⁵,Yamada-Takamura Yukiko⁸⁹¹⁰¹¹,Wang Ying¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials

2. Technical Institute of Physics and Chemistry

3. Chinese Academy of Sciences

4. Beijing

5. China

6. School of Chemistry and Chemical Engineering

7. University of Chinese Academy of Sciences

8. School of Materials Science

9. Japan Advanced Institute of Science and Technology

10. Ishikawa

11. Japan

Abstract

Inverted organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) emitters achieved a maximum external quantum efficiency of 16.4%.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02406A

Reference47 articles.

1. White organic light-emitting diodes with fluorescent tube efficiency

2. Low-Power Flexible Organic Light-Emitting Diode Display Device