Extremely-low-voltage, high-efficiency and stability-enhanced inverted bottom OLEDs enabled via a p-type/ultra-thin metal/n-doped electron injection layer

Author:

Ding Lei12,Wang Jiang-Nan2,Ni Ting2,Xue Qifan3ORCID,Hu Sujuan4,Wu Runfeng4,Luo Dongxiang56,Zheng Hua7,Liu Yuan8,Liu Baiquan4ORCID

Affiliation:

1. School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, 215009, China

2. Jiangsu Jitri Org Optoelectronics Technology Co., Ltd, Suzhou, 215215, China

3. State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou, 510640, China

4. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China

5. Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, China

6. Institute of Semiconductors, South China Normal University, 510631, China

7. School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan, 523808, China

8. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, 510090, China

Abstract

A p-type/ultra-thin metal/n-doped electron injection layer is proposed to enhance the electron injection of inverted bottom OLEDs. The OLEDs exhibit an extremely-low voltage of 2.97 V and efficiency of 84.9 lm W−1 at 100 cd m−2.

Funder

National Natural Science Foundation of China

Science and Technology Planning Project of Guangdong Province

Innovation and Technology Fund

Basic and Applied Basic Research Foundation of Guangdong Province

Natural Science Foundation of Jiangsu Province

State Key Laboratory of Luminescent Materials and Devices

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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