Solution-processable black phosphorus nanosheets covalently modified with polyacrylonitrile for nonvolatile resistive random access memory

Author:

Gu Minchao12345,Zhang Bin12345,Liu Bo67895,Che Qiang12345,Zhao Zhizheng12345,Chen Yu12345ORCID

Affiliation:

1. Key Laboratory for Advanced Materials

2. Institute of Applied Chemistry

3. East China University of Science and Technology

4. Shanghai 200237

5. China

6. School of Chemistry

7. Biology and Materials Engineering

8. Suzhou University of Science and Technology

9. Suzhou 215009

Abstract

The as-fabricated Al/BP–PAN/ITO device exhibits excellent nonvolatile rewritable memory performance, with a high ON/OFF current ratio exceeding 104 and a small switch-on voltage of −1.45 V.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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