Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy-Reference-Cited by-同舟云学术

Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy

Published:2016 Issue:20 Volume:8 Page:10564-10569
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Su Weitao¹²³⁴⁵,Kumar Naresh⁶⁷,Mignuzzi Sandro⁶⁷,Crain Jason⁶⁷⁸⁹¹⁰,Roy Debdulal⁶⁷

Affiliation:

1. Institute of Materials Physics

2. Hangzhou Dianzi University

3. Hangzhou, China

4. Key Laboratory of RF Circuits and Systems (Hangzhou Dianzi University)

5. Ministry of Education of China

6. National Physical Laboratory

7. Middlesex, UK

8. School of Physics and Astronomy

9. University of Edinburgh

10. Edinburgh, UK

Abstract

Excitonic processes in single-layer MoS₂ are mapped for the first time using tip-enhanced photoluminescence and Raman microscopy with 20 nm spatial resolution.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR07378B

Reference53 articles.

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2. Two-Step Growth of Two-Dimensional WSe2/MoSe2 Heterostructures

3. Evolution of Electronic Structure in Atomically Thin Sheets of WS2and WSe2

4. Phonons in single-layer and few-layer MoS2and WS2

5. Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

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