Nanoscale elemental quantification in heterostructured SiGe nanowires
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR07503J
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1. Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires
2. Pressure-Modulated Alloy Composition in Si(1-x)Gex Nanowires
3. The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si(1−x)GexNanowires
4. Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires
5. Vertically integrated silicon-germanium nanowire field-effect transistor
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