High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes-Reference-Cited by-同舟云学术

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

Author:

Chen Shanshan¹²³⁴,Xu Chenxiao⁵⁶⁷⁸⁹,Pan Xinhua⁵⁶⁷⁸⁹^ORCID,He Haiping⁵⁶⁷⁸⁹^ORCID,Huang Jingyun⁵⁶⁷⁸⁹^ORCID,Lu Bin⁵⁶⁷⁸⁹,Ye Zhizhen⁵⁶⁷⁸⁹

Affiliation:

1. School of Materials and Energy

2. Guangdong University of Technology

3. Guangzhou 510006

4. People's Republic of China

5. State Key Laboratory of Silicon Materials

6. Cyrus Tang Center for Sensor Materials and Applications

7. School of Materials Science and Engineering

8. Zhejiang University

9. Hangzhou 310027

Abstract

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn_0.9Mg_0.1O MQWs by using GaN/Al₂O₃ as substrates.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference35 articles.

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