Synthesis of 2D MoS2(1−x)Se2x semiconductor alloy by chemical vapor deposition-Reference-Cited by-同舟云学术

Synthesis of 2D MoS2(1−x)Se2x semiconductor alloy by chemical vapor deposition

Published:2020 Issue:69 Volume:10 Page:42172-42177
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yao Wenwen¹²³⁴⁵,Kang Zhilin¹²³⁴,Deng Jiajun¹²³⁴⁵,Chen Yan¹²³⁴⁵,Song Qian¹²³⁴,Ding Xun Lei¹²³⁴⁵^ORCID,Lu Fangchao¹²³⁴⁵,Wang Wenjie¹²³⁴⁵^ORCID

Affiliation:

1. School of Mathematics and Physics

2. North China Electric Power University

3. Beijing 102206

4. China

5. Institute of Clusters and Low Dimensionals

Abstract

Alloying/doping in two-dimensional (2D) materials is emerging as an increasingly important strategy due to the wide-range bandgap tunability and versatility of these materials.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA07776C

Reference46 articles.

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3. thin films prepared by solid state reaction (induced by annealing) between the constituents in thin film form

4. The hydrogenation and direct desulfurization reaction pathway in thiophene hydrodesulfurization over MoS2 catalysts at realistic conditions: A density functional study

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