Band Gap Engineering of MoxW1–xS2 Alloy Monolayers with Wafer-Scale Uniformity-Reference-Cited by-同舟云学术

Band Gap Engineering of Mo_xW_1–xS₂ Alloy Monolayers with Wafer-Scale Uniformity

Published:2024-04-17 Issue:17 Volume:63 Page:7714-7724
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Zhou Zhonghao¹²,Zhang Xingchen¹,Chen Xinya¹,Cheng Zhihai³^ORCID,Wang Zhiyong¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China

2. Engineering Research Center of Continuous Extrusion, Ministry of Education, Dalian Jiaotong University, Dalian 116028, China

3. Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physic, Renmin University of China, Beijing 100872, China

Funder

Renmin University of China

Dalian High-level Talents Innovation Support program

Postdoctoral Science Foundation of Dalian Jiaotong University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.3c04644

Reference43 articles.

1. Direct observation of a widely tunable bandgap in bilayer graphene

2. Bandgap opening in graphene induced by patterned hydrogen adsorption

3. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

4. Solvatochromic Effect on the Photoluminescence of MoS2Monolayers

5. Synthesis of WS2xSe2–2x Alloy Nanosheets with Composition-Tunable Electronic Properties

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