Bioresistive random access memory with an in-memory computing function based on graphene quantum dots
Author:
Affiliation:
1. School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
2. Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
Abstract
Funder
National Natural Science Foundation of China
Natural Science Foundation of Heilongjiang Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry,Catalysis
Link
http://pubs.rsc.org/en/content/articlepdf/2023/NJ/D3NJ00076A
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1. Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices
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3. Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application
4. Full-function logic circuit based on egg albumen resistive memory
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1. High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer;Applied Physics Letters;2023-07-24
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