The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD-Reference-Cited by-同舟云学术

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The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

Published:2016 Issue:18 Volume:18 Page:13033-13044
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Sahu B. B.¹²³⁴⁵,Yin Y. Y.¹²³⁴⁵,Tsutsumi T.⁶⁷⁸⁹,Hori M.⁶⁷⁸⁹,Han Jeon G.¹²³⁴⁵

Affiliation:

1. Center for Advanced Plasma Surface Technology (CAPST)

2. NU-SKKU Joint Institute for Plasma Nano Materials

3. Department of Advanced Materials Science and Engineering

4. Sungkyunkwan University

5. Suwon 440-746

6. Plasma Nanotechnology Research Center

7. Nagoya University

8. Nagoya

9. Japan

Abstract

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00986G

Reference63 articles.

1. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells

2. Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

3. Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

4. Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing

5. Carboxylic acid terminated monolayer formation on crystalline silicon and silicon nitride surfaces. A surface coverage determination with a fluorescent probe in solutionElectronic Supplementary Information (ESI) available: analytical data of the new compounds and general information on the instruments used for their characterization. See http://www.rsc.org/suppdata/jm/b3/b312273e/

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