Excellent intrinsic Chern insulators: monolayer PdTaX<sub>2</sub> (X = Se, Te)-Reference-Cited by-同舟云学术

Excellent intrinsic Chern insulators: monolayer PdTaX₂ (X = Se, Te)

Published:2024 Issue:11 Volume:12 Page:4062-4069
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Shenda¹,Kang Ruirong¹,Zhou Pan²^ORCID,Lyu Pengbo¹^ORCID,Sun Lizhong¹^ORCID

Affiliation:

1. Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

2. Key Laboratory of Low-dimensional Materials and Application Technology, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

Abstract

An excellent intrinsic Chern insulator with high Tc and sizable bulk gap.

Funder

Natural Science Foundation of Hunan Province

Education Department of Hunan Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04120D

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