Achieving an Ohmic contact in graphene-based van der Waals heterostructures by intrinsic defects and the inner polarized electric field of Janus AlGaSSe-Reference-Cited by-同舟云学术

Achieving an Ohmic contact in graphene-based van der Waals heterostructures by intrinsic defects and the inner polarized electric field of Janus AlGaSSe

Published:2021 Issue:45 Volume:45 Page:21178-21187
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Wang Jiaming¹,Zhang Dongxue¹,Zhou Baozeng¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Abstract

The Schottky barrier height is mainly affected by the synergistic action of the inner polarization electric field of Janus AlGaSSe and the 2D/2D heterostructure.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Tianjin Municipal Education Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NJ/D1NJ03861C

Reference74 articles.

1. 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI