The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS1−xSex nanostructures-Reference-Cited by-同舟云学术

The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS1−xSex nanostructures

Published:2016 Issue:2 Volume:8 Page:804-811
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dai Jun¹²³⁴⁵,Zhou Pengxia⁴⁶⁷,Lu Junfeng¹²³,Zheng Hongge⁴⁵⁸,Guo Jiyuan⁴⁵⁸,Wang Fang⁴⁵⁸,Gu Ning¹²³,Xu Chunxiang¹²³

Affiliation:

1. State Key Laboratory of Bioelectronics

2. Southeast University

3. Nanjing 210096, China

4. Department of Physics

5. Jiangsu University of Science and Technology

6. Nantong University

7. Nantong, China

8. Zhenjiang 212003, China

Abstract

We fabricated CdS_1−xSe_x nanobelts with their band-gap ranging from 2.4 to 1.74 eV, and excitonic photoluminescence and lasing were systematically investigated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR05379J

Reference28 articles.

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5. p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)

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