Affiliation:
1. Department of Applied Sciences & Humanities SVKM's Institute of Technology Dhule India
2. Department of Chemical Engineering, College of Engineering King Khalid University Abha Saudi Arabia
3. Department of Chemical Engineering, College of Engineering Dhofar University Salalah Sultanate of Oman
4. Department of Applied Science and Humanities, MIT School of Computing MIT Art, Design and Technology University Pune India
5. Department of Physics Pankaj Arts and Science College Chopda Jalgaon India
Abstract
AbstractField emission finds a vital space in numerous scientific and technological applications, including high‐resolution imaging at micro‐ and nano‐scales, conducting high‐energy physics experiments, molecule ionization in spectroscopy, and electronic uses. A continuous effort exists to develop new materials for enhanced field emission applications. In the present work, two‐dimensional (2D) well‐aligned CdSSe flake flowers (CdSSe‐FFs) were successfully grown on gold‐coated silicon substrate utilizing a simple and affordable chemical bath deposition approach at ambient temperature. The time‐dependent growth mechanism from nanoparticles to FFs was observed at optimized parameters such as concentration of precursors, pH (~11), deposition time, and solution temperature. The crystalline nature of CdSSe‐FFs is confirmed by high‐resolution transmission electron microscopy (HRTEM) results, and selected area electron diffraction (SAED) observations reveal a hexagonal crystal structure. Additionally, the CdSSe‐FFs thickness was confirmed by TEM analysis and found to be ~20–30 nm. The optical, photoelectric, and field emission (FE) characteristics are thoroughly explored which shows significant enhancement due to the formation of heterojunction between the gold‐coated silicon substrate and CdSSe‐FFs. The UV–visible absorption spectra of CdSSe‐FFs show enhanced absorption at 700 nm, corresponding to the energy band gap (Eg) of 1.77 eV. The CdSSe‐FFs exhibited field emission and photosensitive field emission (PSFE) characteristics. In FE study CdSSe‐FFs shows an increase in current density of 387.2 μ A cm−2 in an applied field of 4.1 V m−1 which is 4.08 fold as compared to without light illumination (95.1 μ A cm−2). Furthermore, it shows excellent emission current stability at the preset value of 1.5 μA over 3 h with a deviation of the current density of less than 5% respectively.Research Highlights
Novel CdSSe flake flowers were grown on Au‐coated Si substrate by a cost‐effective chemical bath deposition route.
The growth mechanism of CdSSe flake flowers is studied in detail.
Field emission and Photoluminescence study of CdSSe flake flowers is characterized.
CdSSe flake flowers with nanoflakes sharp edges exhibited enhanced field emission properties.