Surface passivation and point defect control in Cu(In,Ga)Se2 films with a Na2S post deposition treatment for higher than 19% CIGS cell performance
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. Korea Advanced Institute of Science and Technology
3. Daejeon 34141
4. South Korea
5. Photovoltaic Team
6. Korea Institute of Energy Research
7. Daejeon 34129
Abstract
Na2S as a new alkaline source for the PDT process enables CIGS cell with enhanced efficiency of 19.2% by eliminating InCu antisites along with VCu defects.
Funder
National Research Foundation of Korea
Korea Institute of Energy Technology Evaluation and Planning
Publisher
Royal Society of Chemistry (RSC)
Subject
Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment
Link
http://pubs.rsc.org/en/content/articlepdf/2019/SE/C8SE00570B
Reference27 articles.
1. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells
2. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%
3. Solar Frontier Achieves World Record Thin-Film Solar Cell Efficiency of 22.9%, Solar Frontier Press release , ed. K. Maraun and A. Yamiya , Solar Frontier , Tokyo, Japan , 2017
4. Review on Alkali Element Doping in Cu(In,Ga)Se 2 Thin Films and Solar Cells
5. Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates
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