Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems-Reference-Cited by-同舟云学术

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Published:2021 Issue: Volume: Page:
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Siddik Abubakkar¹²³,Haldar Prabir Kumar¹²³,Paul Tufan⁴⁵⁶³,Das Ujjal⁷¹⁸⁹³,Barman Arabinda¹¹⁰³,Roy Asim⁷¹⁸⁹³,Sarkar Pranab Kumar¹¹¹²¹³³^ORCID

Affiliation:

1. Department of Physics

2. Cooch Behar Panchanan Barma University

3. India

4. School of Materials Science and Nanotechnology

5. Jadavpur University

6. Kolkata 700032

7. Micro and Nano Research Lab

8. National Institute of Technology

9. Silchar

10. Dinhata College

11. Department of Applied Science and Humanities

12. Assam University

13. Silchar 788011

Abstract

Recently, several types of lead halide perovskites have been actively researched for resistive switching memory or artificial synapse due to their current–voltage hysteresis along with the feasibility of fabrication and superior charge mobility.

Funder

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08214G

Reference63 articles.

1. Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

2. Device and materials requirements for neuromorphic computing

3. Emerging materials in neuromorphic computing: Guest editorial