Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array-Reference-Cited by-同舟云学术

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Published:2020 Issue:44 Volume:22 Page:25819-25826
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Bowen¹²³⁴⁵,Nie Zhaogang⁶⁷⁸⁵^ORCID,Wang Bo⁶⁷⁸⁵,Wang Dengkui¹²³⁴⁵,Tang Jilong¹²³⁴⁵^ORCID,Wang Xiaohua¹²³⁴⁵,Zhang Jiahua⁹¹⁰¹¹¹²¹³^ORCID,Xing Guichuan¹⁴¹⁵⁵^ORCID,Zhang Wenchun¹⁶¹⁷¹⁸⁵,Wei Zhipeng¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of High-Power Semiconductor Laser

2. School of Science

3. Changchun University of Science and Technology

4. Changchun 130022

5. China

6. School of Physics and Optoelectronic Engineering

7. Guangdong University of Technology

8. Guangzhou 510006

9. State Key Laboratory of Luminescence and Applications

10. Changchun Institute of Optics

11. Fine Mechanics and Physics

12. Chinese Academy of Sciences

13. Changchun 130033

14. Institute of Applied Physics and Materials Engineering

15. University of Macau

16. College of Traditional Chinese Medicine

17. Jiangxi University of Traditional Chinese Medicine

18. Nanchang 330004

Abstract

Ultrafast carrier nonradiative relaxation dynamics and concomitant band-gap evolutions in bare GaAs and a core–shell GaAs/AlGaAs semiconductor nanowire array.

Funder

National Natural Science Foundation of China

State Key Laboratory of Luminescence and Applications

Education Department of Jilin Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP04250A

Reference67 articles.

1. Integration of Single-Photon Sources and Detectors on GaAs