Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept

Author:

Arshad Naila1234,Irshad Muhammad Sultan56784ORCID,Abbasi Misbah Sehar934,Ur Rehman Saif1011121314ORCID,Ahmed Iftikhar15131614ORCID,Javed M. Qasim17181614,Ahmad Shafiq1920212223ORCID,Sharaf Mohamed1920212223,Al Firdausi Muhammad Dzulqarnain1920212223

Affiliation:

1. Institute of Quantum Optics and Quantum Information

2. School of Science

3. Xi'an Jiaotong University (XJTU)

4. P. R. China

5. Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials

6. School of Materials Science and Engineering

7. Hubei University

8. Wuhan 430062

9. School of Energy and Power Engineering

10. Clean Energy Technology Research Lab (CERL

11. )

12. Department of Physics

13. COMSATS University Islamabad

14. Pakistan

15. Energy Research Centre

16. Lahore

17. Food and Biotechnology Research Center (FBRC)

18. Pakistan Council of Scientific and Industrial Research

19. Department of Industrial Engineering

20. College of Engineering

21. King Saud University

22. Riyadh

23. Saudi Arabia

Abstract

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for resistive random-access memory (RRAM).

Funder

King Saud University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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