Novel single-source precursors for SiBxCyNz film deposition-Reference-Cited by-同舟云学术

Novel single-source precursors for SiBxCyNz film deposition

Published:2017 Issue:20 Volume:41 Page:11926-11933
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Merenkov Ivan S.¹²³^ORCID,Gostevskii Boris A.⁴⁵³,Krasnov Pavel O.¹²³⁶³,Basova Tamara V.¹²³,Zhukov Yuri M.⁷⁸³^ORCID,Kasatkin Igor A.⁷⁸³,Sysoev Sergey V.¹²³,Kosyakov Victor I.¹²³,Khomyakov Maksim N.⁹²³,Kosinova Marina L.¹²³

Affiliation:

1. Nikolaev Institute of Inorganic Chemistry SB RAS

2. Novosibirsk

3. Russia

4. Favorsky Irkutsk Institute of Chemistry SB RAS

5. Irkutsk

6. Reshetnev Siberian State Aerospace University, Krasnoyarsk

7. Saint-Petersburg State University, St

8. Petersburg

9. Institute of Laser Physics SB RAS

Abstract

A novel type of single-source CVD precursor – Me₃SiCCB[N(SiMe₃)₂]₂ – has been synthesized and successfully tested for the first time in SiBCN film deposition.

Funder

Russian Foundation for Basic Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NJ/C7NJ01651D

Reference27 articles.

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2. Reactive magnetron sputtering of hard Si–B–C–N films with a high-temperature oxidation resistance

3. Thermal conductivity of high-temperature Si–B–C–N thin films