Exciton and charge carrier dynamics in few-layer WS2-Reference-Cited by-同舟云学术

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Exciton and charge carrier dynamics in few-layer WS2

Published:2016 Issue:10 Volume:8 Page:5428-5434
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Vega-Mayoral Victor¹²³⁴³,Vella Daniele¹²³⁴³,Borzda Tetiana¹²³⁴³,Prijatelj Matej¹²³⁴³,Tempra Iacopo⁵⁶⁷⁸,Pogna Eva A. A.⁵⁶⁷⁸,Dal Conte Stefano⁵⁶⁷⁸,Topolovsek Peter⁴³⁹¹⁰¹¹,Vujicic Natasa¹²¹³¹⁴¹⁵,Cerullo Giulio⁵⁶⁷⁸,Mihailovic Dragan¹²³⁴³,Gadermaier Christoph¹²³⁴³

Affiliation:

1. Department of Complex Matter

2. Jozef Stefan Institute

3. 1000 Ljubljana, Slovenia

4. Jozef Stefan International Postgraduate School

5. IFN-CNR

6. Department of Physics

7. Politecnico di Milano

8. 20133 Milan, Italy

9. Center for Nano Science and Technology

10. Italian Institute of Technology

11. 20133 Milano, Italy

12. Institute of Physics

13. 10000 Zagreb, Croatia

14. Center of Excellence for Advanced Materials and Sensing Devices

15. HR-10000, Croatia

Abstract

We present, for the first time to our knowledge, WS₂ photoexcited state dynamics and propose a model that reproduces them.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR08384B

Reference49 articles.

1. Single-layer MoS2 transistors

2. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

3. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

4. Solar-energy conversion and light emission in an atomic monolayer p–n diode

5. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

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