One-step dual-additive passivated wide-bandgap perovskites to realize 44.72%-efficient indoor photovoltaics

Author:

Ma Qiaoyan1,Wang Yousheng12ORCID,Liu Liming1,Yang Peng1,He Wujie1,Zhang Xing1,Zheng Jianzha1,Ma Mengen1,Wan Meixiu12,Yang Yuzhao1ORCID,Zhang Cuiling3,Mahmoudi Tahmineh4,Wu Shaohang123ORCID,Liu Chong123ORCID,Hahn Yoon-Bong4ORCID,Mai Yaohua123

Affiliation:

1. Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China

2. Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou 510632, China

3. Guangdong Mellow Energy Co., Ltd., Guangzhou 510630, China

4. School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Jeonbuk National University, 567 Baekjedaero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea

Abstract

A one-step dual-additive strategy enables high-quality wide-bandgap perovskite films with efficient defect passivation, resulting in a certified record PCE of 44.72%, with a high Voc of 1.069 V, and an FF of 82.3% under U30 light.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

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