Thickness-modulated lateral MoS2 diodes with sub-terahertz cutoff frequency
Author:
Affiliation:
1. School of Engineering Science
2. Simon Fraser University
3. Burnaby
4. Canada
5. Chair of High Frequency Electronics
6. RWTH Aachen University
7. 52074 Aachen
8. Germany
Abstract
Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency (fc) of up to 126 GHz are implemented and fully characterised.
Funder
Natural Sciences and Engineering Research Council of Canada
Simon Fraser University
Deutsche Forschungsgemeinschaft
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR00089F
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