Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors-Reference-Cited by-同舟云学术

Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors

Published:2017-01-03 Issue:19 Volume:27 Page:1604093
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yu Zhihao¹,Ong Zhun-Yong²,Li Songlin¹,Xu Jian-Bin³,Zhang Gang²,Zhang Yong-Wei²,Shi Yi¹,Wang Xinran¹

Affiliation:

1. National Laboratory of Solid State Microstructures; School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures; Nanjing University; Nanjing 210093 P. R. China

2. Institute of High Performance Computing; 1 Fusionopolis Way 138632 Singapore

3. Department of Electronic Engineering and Materials Science and Technology Research Center; The Chinese University of Hong Kong; Hong Kong SAR P. R. China

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China

MICM Laboratory Foundation

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201604093/fullpdf

Reference162 articles.

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