A flexible memory with low-voltage and high-operation speed using an Al2O3/poly(α-methylstyrene) gate stack on a muscovite substrate-Reference-Cited by-同舟云学术

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A flexible memory with low-voltage and high-operation speed using an Al2O3/poly(α-methylstyrene) gate stack on a muscovite substrate

Published:2019 Issue:7 Volume:7 Page:1913-1918
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Huixin¹²³⁴⁵,He Waner¹²³⁴⁵,Mai Jiaying¹²³⁴⁵,Wang Jiali¹²³⁴⁵,Zou Zhengmiao¹²³⁴⁵,Wang Dao¹²³⁴⁵,Feng Jiajun⁶⁷⁸⁵,Zhang Aihua¹⁹³⁴⁵,Fan Zhen¹²³⁴⁵^ORCID,Wu Sujuan¹⁹³⁴⁵,Zeng Min¹⁹³⁴⁵,Gao Jinwei¹⁹³⁴⁵^ORCID,Zhou Guofu¹⁰¹¹³⁴⁵,Lu Xubing¹²³⁴⁵^ORCID,Liu J.-M.⁶⁷⁸⁵¹^ORCID

Affiliation:

1. Institute for Advanced Materials

2. South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology

3. South China Normal University

4. Guangzhou

5. China

6. Laboratory of Solid State Microstructures, Innovation Center of Advanced Microstructures

7. Nanjing University

8. Nanjing 210093

9. South China Academy of Advanced Optoelectronics and Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials

10. Electronic Paper Displays Institute

11. South China Academy of Advanced Optoelectronics

Abstract

A clear technical demonstration of the critical role of the blocking layers, which has never been addressed sufficiently in previous work.

Funder

National Natural Science Foundation of China

South China Normal University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05932B

Reference43 articles.

1. Non-Volatile Ferroelectric Memory with Position-Addressable Polymer Semiconducting Nanowire

2. Organic Field-Effect Transistor Memory Devices Using Discrete Ferritin Nanoparticle-Based Gate Dielectrics

3. Flexible Electronics: Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory (Adv. Mater. 6/2013)

4. Synthesis, morphology, and electrical memory application of oligosaccharide-based block copolymers with π-conjugated pyrene moieties and their supramolecules

5. Phthalocyanine‐Cored Star‐Shaped Polystyrene for Nano Floating Gate in Nonvolatile Organic Transistor Memory Device

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