Toward fast growth of large area high quality graphene using a cold-wall CVD reactor-Reference-Cited by-同舟云学术

Toward fast growth of large area high quality graphene using a cold-wall CVD reactor

Published:2017 Issue:82 Volume:7 Page:51951-51957
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Alnuaimi Aaesha¹²³⁴⁵^ORCID,Almansouri Ibraheem¹²³⁴⁵,Saadat Irfan¹²³⁴⁵,Nayfeh Ammar¹²³⁴⁵

Affiliation:

1. Department of Electrical and Computer Engineering (ECE)

2. Masdar Institute

3. Khalifa University of Science and Technology

4. Abu Dhabi

5. United Arab Emirates

Abstract

In this work we provide a detailed analysis on graphene synthesis by Chemical Vapor Deposition (CVD) using a cold wall CVD reactor to achieve fast production of large area high quality graphene.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA10336K

Reference34 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Epitaxial graphene on SiC{0001}: advances and perspectives

3. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

4. Effect of a Balanced Concentration of Hydrogen on Graphene CVD Growth

5. Chemical reduction of graphene oxide: a synthetic chemistry viewpoint

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