Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4806998
Reference36 articles.
1. LEED and Auger electron observations of the SiC(0001) surface
2. Heteroepitaxial graphite on6H−SiC(0001): Interface formation through conduction-band electronic structure
3. Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces
4. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
5. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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