The importance of annealing and stages coverage on the epitaxial growth of complex oxides on silicon by pulsed laser deposition
Author:
Affiliation:
1. Advanced Materials Department
2. Jožef Stefan Institute
3. 1000 Ljubljana
4. Slovenia
5. Department of Surface Engineering and Optoelectronics
Abstract
Basic steps followed for the SrTiO3 deposition. The coverages before oxidation and crystallization stages have been optimized in this work.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA02820B
Reference34 articles.
1. Crystalline Oxides on Silicon: The First Five Monolayers
2. Epitaxial oxide thin films on Si(001)
3. Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique
4. Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique
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