Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors-Reference-Cited by-同舟云学术

Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

Published:2021 Issue:6 Volume:13 Page:3757-3766
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhao Hongxiao¹²³⁴⁵^ORCID,Yan Yong¹²³⁴⁵^ORCID,Song Xiaohui¹²³⁴⁵,Ma Zinan¹²³⁴⁵,Tian Tian¹²³⁴⁵,Jiang Yurong¹²³⁴⁵,Li Xueping¹²³⁴⁵^ORCID,Xia Congxin¹²³⁴⁵^ORCID,Li Jingbo⁶⁷⁸⁵

Affiliation:

1. School of Physics

2. Henan Key Laboratory of Photovoltaic Materials

3. Henan Normal University

4. Henan 453007

5. China

6. Institute of Semiconductors

7. South China Normal University

8. Guangzhou 510631

Abstract

Few-layer In_4/3P₂Se₆ nanoflakes were exfoliated and exhibit an excellent optoelectronic detection-performance.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Henan Province

Science and Technology Innovation Talents in Universities of Henan Province

Doctoral Scientific Research Start-up Foundation from Henan University of Technology

Henan Normal University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR07987A

Reference63 articles.

1. Surface modification of multilayer FePS3 by Ga ion irradiation

2. Metal Thio‐ and Selenophosphates as Multifunctional van der Waals Layered Materials

3. Spectroscopic properties of a freestanding MnPS3 single layer

4. Enabling and Controlling Negative Photoconductance of FePS 3 Nanosheets by Hot Carrier Trapping

5. Activating Basal Planes of NiPS 3 for Hydrogen Evolution by Nonmetal Heteroatom Doping

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