Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?-Reference-Cited by-同舟云学术

Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?

Published:2021 Issue:10 Volume:13 Page:5536-5544
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu Shiqi¹²³⁴^ORCID,Yang Jie¹²³⁴,Xu Lin⁵²³⁴,Li Jingzhen¹²³⁴^ORCID,Yang Chen¹²³⁴^ORCID,Li Ying¹²³⁴,Shi Bowen¹²³⁴,Pan Yuanyuan⁶⁷⁸⁹¹⁰,Xu Linqiang¹²³⁴^ORCID,Ma Jiachen¹²³⁴^ORCID,Yang Jinbo¹²³⁴¹¹,Lu Jing¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of Physics

2. Peking University

3. Beijing 100871

4. P. R. China

5. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics

6. State Key Laboratory of Heavy Oil Processing

7. Institute of New Energy

8. College of Chemical Engineering

9. China University of Petroleum (East China)

10. Qingdao

11. Collaborative Innovation Center of Quantum Matter

Abstract

ab initio quantum transport simulation shows that the ultra-thin (W_Fin = 0.8 nm) Si tri-gate FinFET can work well in the sub-10 nm gate length region when the perfect structure is kept.

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

National Materials Genome Project

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR09094H

Reference52 articles.

1. Is Silicon's Reign Nearing Its End?