Sublimation-based wafer-scale monolayer WS2 formation via self-limited thinning of few-layer WS2-Reference-Cited by-同舟云学术

Sublimation-based wafer-scale monolayer WS₂ formation via self-limited thinning of few-layer WS₂

Published:2024 Issue:1 Volume:9 Page:132-142
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Chen Mingxi¹^ORCID,Chai Jianwei¹,Wu Jing¹^ORCID,Zheng Haofei¹²,Wu Wen-Ya¹^ORCID,Lourembam James¹^ORCID,Lin Ming¹^ORCID,Kim Jun-Young¹^ORCID,Kim Jaewon¹^ORCID,Ang Kah-Wee¹²,Ng Man-Fai³^ORCID,Medina Henry¹,Tong Shi Wun¹^ORCID,Chi Dongzhi¹^ORCID

Affiliation:

1. Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore

2. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore

3. Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore

Abstract

We present the use of an in situ self-limited thinning of few-layer WS2 formed by the sulfurization of WOx for the growth of wafer-scale fully-covered monolayer WS2. This thinning approach can also be utilized for the preparation of monolayer MoS2.

Funder

National Research Foundation Singapore

Science and Engineering Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D3NH00358B

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