Interfacial contact barrier and charge carrier transport of MoS2/metal(001) heterostructures-Reference-Cited by-同舟云学术

Interfacial contact barrier and charge carrier transport of MoS₂/metal(001) heterostructures

Published:2023 Issue:13 Volume:25 Page:9548-9558
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Zi-Wen¹²,Liu Zhao-Sheng¹²,Zhang Jun-Jie¹²,Sun Bing-Ning¹²,Zou Dai-Feng¹²,Nie Guo-Zheng¹²^ORCID,Chen Mingyan³,Zhao Yu-Qing¹²^ORCID,Jiang Shaolong⁴

Affiliation:

1. School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China

2. Hunan Provincial Key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China

3. Hongzhiwei Technology (Shanghai) Co. Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai, China

4. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

Abstract

The height and width of Schottky barrier greatly reduce the electron injection efficiency. In this paper, high electron tunneling probability can be achieved by changing the interlayer distance of heterostructure.

Funder

Hunan University of Science and Technology

Scientific Research Foundation of Hunan Provincial Education Department

Natural Science Foundation of Hunan Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP00009E

Reference57 articles.