Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications-Reference-Cited by-同舟云学术

Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications

Published:2016 Issue:3 Volume:4 Page:589-595
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wu Chun-Yan¹²³⁴,Wang Xin-Gang¹²³⁴,Pan Zhi-Qiang¹²³⁴,Wang You-Yi¹²³⁴,Yu Yong-Qiang¹²³⁴,Wang Li¹²³⁴,Luo Lin-Bao¹²³⁴

Affiliation:

1. School of Electronic Science and Applied Physics

2. Hefei University of Technology

3. Hefei

4. China

Abstract

A memory device was fabricated based on KCu₇S₄nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼10⁴, and a retention time >10⁴s.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03829D

Reference38 articles.

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4. Compounds Containing Copper−Sulfur Layers: Electronic Structure, Conductivity, and Stability

5. Electron transport and magnetic properties of some mixed-valent alkalithiocuprates

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