Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer-Reference-Cited by-同舟云学术

Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer

Published:2017 Issue:3 Volume:8 Page:2407-2412
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Zhang Jie¹²³⁴⁵,Zhang Lin¹²³⁴⁵,Wang Wei¹²³⁴⁵,Han Lianhuan¹²³⁴⁵,Jia Jing-Chun¹²³⁴⁵,Tian Zhao-Wu¹²³⁴⁵,Tian Zhong-Qun¹²³⁴⁵,Zhan Dongping¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)

2. Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM)

3. Department of Chemistry

4. College of Chemistry and Chemical Engineering

5. Xiamen University

Abstract

We demonstrated contact electrification induced interfacial redox reactions and developed a direct electrochemical nanoimprint lithography method applicable to crystalline semiconductors.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/SC/C6SC04091H

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